Chip Gallery | Computer Architecture and Microelectronics Group – GAMA
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Chip Gallery

XFAB 350 nm – Brazil IP (2012)
This chip was designed by the GAMA team for the Brazil-IP project. It contains a 32-bit floating-point unit and includes a serial interface for in/out communication. The operating frequency is 16 MHz and the hole circuit is composed of 150.000 transistors.

Area: 3mm x 3mm
TSMC 180 nm – FreeMiniasic IMEC/Europractice (2015)
This IC was designed in collaboration with the Integrable System Laboratory (LSI) of the University of São Paulo – USP. It is composed of the following circuits:

  • Ultra-Low Power Operational Transconductance Amplifiers (OTA)
  • 2.4GHz RF to DC Energy Harvester
  • Coordinate Rotation Digital Computer (CORDIC) Numerically Controlled Oscillator (NCO)
TSMC 130 nm – IMEC/Europractice/CERN (2015)
This IC was designed in collaboration with the Integrable System Laboratory (LSI) of the University of São Paulo – USP using some free silicon area of the  SAMPA chip used at CERN by the ALICE (A Large Ion Collider Experiment). It is composed of the following circuits:

  • Ultra-Low Voltage Active Filters for Zigbee RF Receivers
  • Ultra-Low Voltage Successive Approximation ADC
  • Test Circuits used to the Transistor Electrical Characterization
Global Foundries 130 nm – MOSIS (2016)
This IC was designed in collaboration with the Federal University of Rio Grande do Sul. It is composed of the following circuits:

  • RF Transceivers
  • Baseband Circuits
  • Balun Transformers
TSMC 180 nm – FreeMiniasic IMEC/Europractice (2016)
This IC  is composed of the following circuits:

  • Voltage References and Bandgap Circuits
  • Digitally-Programmable Operational Amplifier
  • Gm-C Low-Pass Filter
  • Test Circuits used to the Transistor Electrical Characterization
TSMC 180 nm – FreeMiniasic IMEC/Europractice (2017)
This IC was designed in collaboration with the Integrable System Laboratory (LSI) of the University of São Paulo – USP.

Some of the front-end circuits of a Bluetooth Low Energy RF receivers were prototyped in this IC:

  • 0.5V Low Noise Amplifier for BLE 2.4GHz Receivers
  • 0.5V Voltage Controlled Oscillator (VCO) working at 2.4GHz
  • 0.36V 1MHz Programmable-Gain Amplifier
  • 0.4V 2MHz Complex Band-Pass Filter
  • 0.5V Successive Approximation ADC
Global Foundries 130 nm – MOSIS (2018)
This IC was designed in collaboration with the Integrable System Laboratory (LSI) of the University of São Paulo – USP.

Some of the front-end circuits of a Bluetooth Low Energy RF receivers were prototyped in this IC:

  • 0.5V Low Noise Amplifier for BLE 2.4GHz Receivers
  • 0.5V Voltage Controlled Oscillator (VCO) working at 2.4GHz
  • 0.4V Programmable-Gain Tow-Thomas Biquad
  • 0.4V Inverter-Based Operational Amplifier
TSMC 180 nm – FreeMiniasic IMEC/Europractice (2018)
This IC  is composed of some active filters and sigma-delta analog to digital converters. All the circuits are able to operate with ultra-low voltage supplies (<0.6V) and are targeted to IoT applications
TSMC 180 nm – FreeMiniasic IMEC/Europractice (2021)
This IC was design by the DMPSV group od the University of São Paulo as a part of the project of breast cancer detections by meas of UWB RF signals. The GAMA team has designed some blocks of this IC. In this case a negative-resistance based amplifier was prototyped in this IC.